unisonic technologies co., ltd mjd210 pnp silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2007 unisonic technologies co., ltd qw-r213-001.c pnp silicon dpak for surface mount applications ? description the utc mjd210 is designed for low voltage, low-power, high-gain audio amplifier applications. ? feature *collector-emitter sustaining voltage v ceo(sus) =-25v (min) @ i c =-10ma *high dc current gain h fe =70 (min) @ i c =-500ma =45 (min) @ i c =-2a =10 (min) @ i c =-5a *lead formed for surface mount applications in plastic sleeves (no suffix) *straight lead version in plastic sleeves (?-1? suffix) *lead formed version in 16mm tape and reel (?t4? suffix) *low collector ? emitter saturation voltage v ce(sat) = -0.3v (max) @ i c =-500ma = -0.75v (max) @ i c = -2.0 a *high current-gain-bandwidth product f t = 65 mhz (min) @ i c = -100 ma *annular construction for low leakage i cbo = -100 na @ rated v cb to-252 1 1 to-251 ? ordering information ordering number pin assignment lead free plating halogen free package 1 2 3 packing MJD210L-TM3-T mjd210g-tm3-t to-251 b c e tube mjd210l-tn3-t mjd210g-tn3-t to-252 b c e tube mjd210l-tn3-r mjd210g-tn3-r to-252 b c e tape reel
mjd210 pnp silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r213-001.c ? absolute maximum ratings (ta=25 c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -7 v continuous -5 a collector current peak i c -10 a base current i b -1 a t c =25 c 12.5 w derate above 25 c0.1 w/ c ta=25 c (note2) 1.4 w total device dissipation derate above 25 c p d 0.011 w/ c junction temperature t j +150 c storage junction temperature t stg -65 ~ +150 c note: 1.absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. when surface mounted on minimum pad sizes recommended. ? thermal data (ta=25 c, unless otherwise specified) parameter symbol rating unit junction to ambient ja 89.3 c/w junction to case jc 10 c/w ? electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min max unit off characteristics collector-emitter sustaining voltage(note 1) v ceo(sus) i c =-10ma, i b =0 -25 v v cb =-40v, i e =0 -100 na collector cutoff current i cbo v cb =-40v, i e =0, t j =125 c -100 na emitter cutoff current i ebo v be =-7v, i c =0 -100 na on characteristics i c =-500ma, v ce =-1v 70 i c =-2a, v ce =-1v 45 180 dc current gain (note 1) h fe i c =-5a, v ce =-2v 10 i c =-500ma, i b =-50ma -0.3 i c =-2a, i b =-200ma -0.75 collector-emitter saturation voltage (note 1) v ce(sat) i c =-5a, i b =-1a -1.8 v base-emitter saturation voltage (note 1) v be(sat) i c =-5a, i b =-1a -2.5 v base-emitter on voltage (note 1) v be(on) i c =-2a, v ce =-1v -1.6 v dynamic characteristics current-gain-bandwidth product (note 2) f t i c =-100ma, v ce =-10v, f test = 10mhz 65 mhz output capacitance c ob v cb =-10v, i e =0, f=0.1mhz 120 pf note: 1. pulse test: pulse width = 300 s, duty cycle 2%. 2. f t = h fe ? f test .
mjd210 pnp silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r213-001.c ? typical characteristics 25 20 15 10 5 0 25 50 75 100 125 150 temperature,t( ) t c t a 2.5 2 1.5 t a t c power dissipation ,p d (w) 1 power derating 25 s +11v -9v t r t f 10ns duty cycle=1% r b and r c varied to obtain desired current levels d1 must be fast recovery type, e.g.: 1n5825 used above i b 100ma for pnp test circuit msd6100 used below i b 100ma reverse all polaritries 51 -4v r b scope +30v v cc r c d1 v ds =10v i d =6v (surface mount ) switching time test circuit 0.5 0 1000 100 10 1 0.01 0.1 1 10 0.02 0.03 0.05 5 3 2 0.5 0.3 0.2 2 3 5 50 30 20 500 300 200 collector current,i c (a) turn-on time time, t(ns) 10k 1k 100 10 0.01 0.1 1 10 0.02 0.03 0.05 5 3 2 0.5 0.3 0.2 20 30 50 500 300 200 5k 3k 2k turn-off time t d t f t s t f time, t(ns) collector current, i c (a) (v cc =30v,i c /i b =10,t j =25 ) (v cc =30v,i c /i b =10,i b 1=i b 2,t j =25 ) dc current gain,h fe voltage,v(v)
mjd210 pnp silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r213-001.c ? typical characteristics (cont.) 0.1 1 0.05 0.07 5 3 2 0.5 0.3 0.2 temperature current (a) 0.7 +1.5 +0.5 -0.5 -1.5 -2.5 +2.5 *applies for i c /i b h ef/3 collector current, i c (a) temperature coefficients , v (mv/ ) -2 -1 0 +1 +2 * vc for v ce(sat) vb for v be 25 to 150 -55 to 25 25 to 150 -55 to 25 200 100 30 20 0.4 1 40 0.5 20 10 46 2 50 70 capacitance capacitance ,c (pf) t j =25 c ib c ob reverse voltage, v r (v) transient thermal resistence (normalized) ,r(t) 0.01 1 0.3 10 20 5 3 2 active region safe operating area 0.1 1 10 5 3 2 7 30 __ _ __ _bonding wire limited __ __ __ thermally limited @t c =25 (singel pulse) _______ second breakdown limited curves aplly below rated v ceo collector-emitter voltage, v ce (v) 100 500 1ms 5ms t j =150 dc there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c -v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of fig. 9 is based on t j (pk)=150 ; tc is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j (pk)150 . t j (pk) may be calculated from the data in figure 8. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjd210 pnp silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r213-001.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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